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  1. Ordering mechanism and quantum anomalous Hall effect of magnetically doped topological insulators

    We investigate magnetic ordering and the quantum anomalous Hall effect (QAHE) in Cr-doped topological insulators using systematic first-principles calculations, explaining the mechanism responsible for ferromagnetic order and the reason why Sb2Te3 is a better QAHE host than Bi2Se3 or Bi2Te3. In this work, we conclude that these magnetic topological insulators have relatively long-range exchange interactions within quintuple layers and weak interactions between quintuple layers. Our analyses for the spin splitting of the topological surface states suggest that the temperature at which the QAHE occurs in these materials can be enhanced significantly by Mo-Cr co-doping.
  2. Engineering Topological Surface States of Cr-Doped Bi2Se3 Films by Spin Reorientation and Electric Field

    The tailoring of topological surface states in topological insulators is essential for device applications and for exploring new topological phase. In this paper, we propose a practical way to induce the quantum anomalous Hall phase and unusual metal–insulator transitions in Cr-doped Bi2Se3 films based on the model Hamiltonian and first-principles calculations. Using the combination of in-plane and plane-normal components of the spin along with external electric fields, we demonstrate that the topological state and band structures of topological insulating films exhibit rich features such as the shift of Dirac cones and the opening of nontrivial band gaps. We also showmore » that the in-plane magnetization leads to significant suppression of inter-TSS scattering in Cr-doped Bi2Se3. Our work provides new strategies to obtain the desired electronic structures for the device, complementary to the efforts of an extensive material search.« less

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"Jhi, Seung-Hoon"

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